Information card for entry 4081940
| Formula |
C15 H33 Cl3 Ge2 Si3 |
| Calculated formula |
C15 H33 Cl3 Ge2 Si3 |
| SMILES |
[Ge]([Ge](Cl)(Cl)Cl)([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C.c1ccccc1 |
| Title of publication |
“Donor–Acceptor” Oligogermanes: Synthesis, Structure, and Electronic Properties |
| Authors of publication |
Zaitsev, Kirill V.; Kapranov, Andrey A.; Churakov, Andrei V.; Poleshchuk, Oleg Kh.; Oprunenko, Yuri F.; Tarasevich, Boris N.; Zaitseva, Galina S.; Karlov, Sergey S. |
| Journal of publication |
Organometallics |
| Year of publication |
2013 |
| Journal volume |
32 |
| Journal issue |
21 |
| Pages of publication |
6500 |
| a |
12.8261 ± 0.0009 Å |
| b |
17.2673 ± 0.0012 Å |
| c |
23.4196 ± 0.0016 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
5186.8 ± 0.6 Å3 |
| Cell temperature |
173 ± 2 K |
| Ambient diffraction temperature |
173 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
61 |
| Hermann-Mauguin space group symbol |
P b c a |
| Hall space group symbol |
-P 2ac 2ab |
| Residual factor for all reflections |
0.0338 |
| Residual factor for significantly intense reflections |
0.0225 |
| Weighted residual factors for significantly intense reflections |
0.0533 |
| Weighted residual factors for all reflections included in the refinement |
0.0559 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.036 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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