Information card for entry 4082567

Structure parameters

• Formula: C26 H48 Cu F3 N4 O4 S Si
• Calculated formula: C26 H48 Cu F3 N4 O4 S Si
• SMILES: [Cu]1([N](C)(C)CC[N]1(C)C)=[Si]1([N](C(C)(C)C)=C(c2ccccc2)(N1C(C)(C)C))OC(C)(C)C.C(F)(F)(F)S(=O)(=O)[O-]
• Title of publication: Facile Access to Mono- and Dinuclear Heteroleptic N-Heterocyclic Silylene Copper Complexes
• Authors of publication: Tan, Gengwen; Blom, Burgert; Gallego, Daniel; Driess, Matthias
• Journal of publication: Organometallics
• Year of publication: 2014
• Journal volume: 33
• Journal issue: 1
• Pages of publication: 363
• a: 11.3849 ± 0.0005 Å
• b: 11.8599 ± 0.0004 Å
• c: 12.8308 ± 0.0004 Å
• α: 90.57 ± 0.003°
• β: 96.796 ± 0.003°
• γ: 95.478 ± 0.003°
• Cell volume: 1712.04 ± 0.11 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 8
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0406
• Residual factor for significantly intense reflections: 0.0323
• Weighted residual factors for significantly intense reflections: 0.0787
• Weighted residual factors for all reflections included in the refinement: 0.0819
• Goodness-of-fit parameter for all reflections included in the refinement: 1.03
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No