Information card for entry 4084466
| Formula |
C32 H48 N4 Si |
| Calculated formula |
C32 H48 N4 Si |
| SMILES |
[Si]1(N(C(=N\C(C)C)\c2ccccc2)C(C)C)(N(C(=N\C(C)C)\c2ccccc2)C(C)C)CC(=C(C1)C)C |
| Title of publication |
Bis[N,N′-diisopropylbenzamidinato(−)]silicon(II): Cycloaddition Reactions with Organic 1,3-Dienes and 1,2-Diketones |
| Authors of publication |
Laskowski, Nadine; Junold, Konstantin; Kupper, Claudia; Baus, Johannes A.; Burschka, Christian; Tacke, Reinhold |
| Journal of publication |
Organometallics |
| Year of publication |
2014 |
| Journal volume |
33 |
| Journal issue |
21 |
| Pages of publication |
6141 |
| a |
9.718 ± 0.002 Å |
| b |
11.391 ± 0.002 Å |
| c |
14.751 ± 0.003 Å |
| α |
104.84 ± 0.02° |
| β |
94.15 ± 0.02° |
| γ |
94.58 ± 0.02° |
| Cell volume |
1566.1 ± 0.6 Å3 |
| Cell temperature |
173 ± 2 K |
| Ambient diffraction temperature |
173 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0691 |
| Residual factor for significantly intense reflections |
0.0504 |
| Weighted residual factors for significantly intense reflections |
0.1352 |
| Weighted residual factors for all reflections included in the refinement |
0.1433 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.039 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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