Information card for entry 4085731
| Formula |
C33 H42 N O4 P Si |
| Calculated formula |
C33 H42 N O4 P Si |
| SMILES |
P(=Nc1c(cccc1C(C)C)C(C)C)(/C(=C(\[Si](C)(C)C)C(=O)OC)C(=O)OC)(c1ccccc1)c1ccccc1 |
| Title of publication |
Fine Tuning of the Substituents on the N-Geminal Phosphorus/Silicon-Based Lewis Pairs for the Synthesis ofZ-Type Silyliminophosphoranylalkenes |
| Authors of publication |
Li, Jiancheng; Li, Yan; Purushothaman, Indu; De, Susmita; Li, Bin; Zhu, Hongping; Parameswaran, Pattiyil; Ye, Qingsong; Liu, Weiping |
| Journal of publication |
Organometallics |
| Year of publication |
2015 |
| Journal volume |
34 |
| Journal issue |
17 |
| Pages of publication |
4209 |
| a |
10.5684 ± 0.0006 Å |
| b |
10.7627 ± 0.0006 Å |
| c |
15.5029 ± 0.001 Å |
| α |
81.274 ± 0.005° |
| β |
85.745 ± 0.005° |
| γ |
68.583 ± 0.005° |
| Cell volume |
1622.26 ± 0.18 Å3 |
| Cell temperature |
173 ± 2 K |
| Ambient diffraction temperature |
173 ± 2 K |
| Number of distinct elements |
6 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0595 |
| Residual factor for significantly intense reflections |
0.0459 |
| Weighted residual factors for significantly intense reflections |
0.1013 |
| Weighted residual factors for all reflections included in the refinement |
0.1074 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.02 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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