Information card for entry 4088152
| Formula |
C55 H42 B F15 N O P Si |
| Calculated formula |
C55 H42 B F15 N O P Si |
| SMILES |
P1(=[N]([B]2(C(=C1c1c(cc(cc1C)C)C)c1c(C(=C2c2c(F)c(F)c(F)c(F)c2F)[Si](C)(C)C)cccc1)c1c(F)c(F)c(F)c(F)c1F)O)(c1c(cc(cc1C)C)C)c1c(F)c(F)c(F)c(F)c1F.c1ccccc1 |
| Title of publication |
FLPNO Nitroxide Radical Formation by a 1,1-Carboboration Route |
| Authors of publication |
Liedtke, René; Eller, Christina; Daniliuc, Constantin G.; Williams, Kamille; Warren, Timothy H.; Tesch, Matthias; Studer, Armido; Kehr, Gerald; Erker, Gerhard |
| Journal of publication |
Organometallics |
| Year of publication |
2015 |
| Journal volume |
35 |
| Journal issue |
1 |
| Pages of publication |
55 |
| a |
30.7946 ± 0.0005 Å |
| b |
17.3685 ± 0.0003 Å |
| c |
19.8227 ± 0.0003 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
10602.3 ± 0.3 Å3 |
| Cell temperature |
223 ± 2 K |
| Ambient diffraction temperature |
223 ± 2 K |
| Number of distinct elements |
8 |
| Space group number |
60 |
| Hermann-Mauguin space group symbol |
P b c n |
| Hall space group symbol |
-P 2n 2ab |
| Residual factor for all reflections |
0.1045 |
| Residual factor for significantly intense reflections |
0.0596 |
| Weighted residual factors for significantly intense reflections |
0.1479 |
| Weighted residual factors for all reflections included in the refinement |
0.1715 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.092 |
| Diffraction radiation wavelength |
1.54178 Å |
| Diffraction radiation type |
CuKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/4088152.html