Information card for entry 4088578

Structure parameters

• Formula: C44 H53 Al N4 Si
• Calculated formula: C44 H53 Al N4 Si
• SMILES: [Si]12([Al](c3ccccc3)(c3ccccc3)c3ccccc3)([N](=C(N1C(C)C)c1ccccc1)C(C)C)[N](=C(N2C(C)C)c1ccccc1)C(C)C
• Title of publication: Lewis Acid/Base Reactions of the Bis(amidinato)silylene [iPrNC(Ph)NiPr]2Si and Bis(guanidinato)silylene [iPrNC(NiPr2)NiPr]2Si with ElPh3(El = B, Al)
• Authors of publication: Mück, Felix M.; Baus, Johannes A.; Bertermann, Rüdiger; Burschka, Christian; Tacke, Reinhold
• Journal of publication: Organometallics
• Year of publication: 2016
• Journal volume: 35
• Journal issue: 16
• Pages of publication: 2583
• a: 17.7123 ± 0.0009 Å
• b: 12.5593 ± 0.0007 Å
• c: 17.9008 ± 0.0009 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3982.1 ± 0.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 29
• Hermann-Mauguin space group symbol: P c a 21
• Hall space group symbol: P 2c -2ac
• Residual factor for all reflections: 0.0646
• Residual factor for significantly intense reflections: 0.0466
• Weighted residual factors for significantly intense reflections: 0.0945
• Weighted residual factors for all reflections included in the refinement: 0.103
• Goodness-of-fit parameter for all reflections included in the refinement: 1.02
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No