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Information card for entry 4102588
Preview
| Coordinates | 4102588.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | O3 Sb Sm3 |
|---|---|
| Calculated formula | O3 Sb Sm3 |
| Title of publication | Synthesis, Crystal and Electronic Structures of New Narrow-Band-Gap Semiconducting Antimonide Oxides RE3SbO3 and RE8Sb3-δO8, with RE = La, Sm, Gd, and Ho |
| Authors of publication | Peng Wang; Scott Forbes; Taras Kolodiazhnyi; Kosuke Kosuda; Yurij Mozharivskyj |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2010 |
| Journal volume | 132 |
| Pages of publication | 8795 - 8803 |
| a | 13.332 ± 0.002 Å |
| b | 3.9501 ± 0.0004 Å |
| c | 11.9187 ± 0.0018 Å |
| α | 90° |
| β | 118.31 ± 0.011° |
| γ | 90° |
| Cell volume | 552.6 ± 0.14 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 3 |
| Space group number | 12 |
| Hermann-Mauguin space group symbol | C 1 2/m 1 |
| Hall space group symbol | -C 2y |
| Residual factor for all reflections | 0.0654 |
| Residual factor for significantly intense reflections | 0.0319 |
| Weighted residual factors for significantly intense reflections | 0.0448 |
| Weighted residual factors for all reflections included in the refinement | 0.05 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.823 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/4102588.html
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