Crystallography Open Database

Information card for entry 4103545

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Coordinates	4103545.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	C43 H49 F4 N Si2
Calculated formula	C43 H49 F4 N Si2
Title of publication	High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences
Authors of publication	Yi-Yang Liu; Cheng-Li Song; Wei-Jing Zeng; Kai-Ge Zhou; Zi-Fa Shi; Chong-Bo Ma; Feng Yang; Hao-Li Zhang; Xiong Gong
Journal of publication	Journal of the American Chemical Society
Year of publication	2010
Journal volume	132
Pages of publication	16349 - 16351
a	7.6749 ± 0.0009 Å
b	7.832 ± 0.001 Å
c	17.134 ± 0.002 Å
α	77.434 ± 0.005°
β	88.437 ± 0.005°
γ	84.073 ± 0.005°
Cell volume	999.9 ± 0.2 Å³
Cell temperature	294 ± 2 K
Ambient diffraction temperature	294 ± 2 K
Number of distinct elements	5
Space group number	2
Hermann-Mauguin space group symbol	P -1
Hall space group symbol	-P 1
Residual factor for all reflections	0.1772
Residual factor for significantly intense reflections	0.0964
Weighted residual factors for significantly intense reflections	0.2181
Weighted residual factors for all reflections included in the refinement	0.2661
Goodness-of-fit parameter for all reflections included in the refinement	1.194
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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