Information card for entry 4104972

Structure parameters

• Formula: C61.8 H49.8 N2 P Rh Si
• Calculated formula: C61.8 H49.8 N2 P Rh Si
• SMILES: [Rh]1([Si](c2ccccc2)(c2ccccc2)c2ccccc2)([P](c2ccccc2)(c2ccccc2)c2ccccc2)n2c(c(c3ccccc3)cc2c2ccccc2)c2cccc[n]12.c1ccccc1
• Title of publication: High Oxidation State Rhodium and Iridium Bis(silyl)dihydride Complexes Supported by a Chelating Pyridyl-Pyrrolide Ligand
• Authors of publication: Jennifer L. McBee; Jose Escalada; T. Don Tilley
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2009
• Journal volume: 131
• Pages of publication: 12703 - 12713
• a: 35.521 ± 0.006 Å
• b: 12.568 ± 0.002 Å
• c: 25.217 ± 0.004 Å
• α: 90°
• β: 99.028 ± 0.002°
• γ: 90°
• Cell volume: 11118 ± 3 ų
• Cell temperature: 149 ± 2 K
• Ambient diffraction temperature: 149 ± 2 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0844
• Residual factor for significantly intense reflections: 0.0778
• Weighted residual factors for significantly intense reflections: 0.2301
• Weighted residual factors for all reflections included in the refinement: 0.2413
• Goodness-of-fit parameter for all reflections included in the refinement: 1.152
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No