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Information card for entry 4105849
Preview
| Coordinates | 4105849.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C41 H42 Cl6 Cu Ga P2 Si2 |
|---|---|
| Calculated formula | C41 H42 Cl6 Cu Ga P2 Si2 |
| SMILES | [Cu]1[P](c2c([Si]([Si](C)(C)c3c([P]1(c1ccccc1)c1ccccc1)cccc3)(C)C)cccc2)(c1ccccc1)c1ccccc1.[Ga](Cl)([Cl-])(Cl)Cl.C(Cl)Cl |
| Title of publication | A Crystalline σ Complex of Copper |
| Authors of publication | Pauline Gualco; Abderrahmane Amgoune; Karinne Miqueu; Sonia Ladeira; Didier Bourissou |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2011 |
| Journal volume | 133 |
| Pages of publication | 4257 - 4259 |
| a | 11.3864 ± 0.0003 Å |
| b | 13.1062 ± 0.0003 Å |
| c | 16.1426 ± 0.0004 Å |
| α | 74.488 ± 0.002° |
| β | 82.906 ± 0.002° |
| γ | 75.135 ± 0.002° |
| Cell volume | 2239.67 ± 0.1 Å3 |
| Cell temperature | 193 ± 2 K |
| Ambient diffraction temperature | 193 ± 2 K |
| Number of distinct elements | 7 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.1098 |
| Residual factor for significantly intense reflections | 0.0498 |
| Weighted residual factors for significantly intense reflections | 0.0977 |
| Weighted residual factors for all reflections included in the refinement | 0.1177 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.981 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/4105849.html
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