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Information card for entry 4106782
Preview
| Coordinates | 4106782.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C46 H55 B F20 Si5 Sn |
|---|---|
| Calculated formula | C46 H55 B F20 Si5 Sn |
| SMILES | [Sn]1([Si](CC)(CC)CC)C([Si](C)(C)C)([Si](C)(C)C)CCC1([Si](C)(C)C)[Si](C)(C)C.[B-](c1c(F)c(F)c(F)c(F)c1F)(c1c(F)c(F)c(F)c(F)c1F)(c1c(F)c(F)c(F)c(F)c1F)c1c(F)c(F)c(F)c(F)c1F |
| Title of publication | Persistent Dialkyl(silyl)stannylium Ions |
| Authors of publication | Annemarie Schäfer; Wolfgang Saak; Detlev Haase; Thomas Müller |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2011 |
| Journal volume | 133 |
| Pages of publication | 14562 - 14565 |
| a | 12.1975 ± 0.0004 Å |
| b | 12.7938 ± 0.0004 Å |
| c | 18.1555 ± 0.0005 Å |
| α | 83.93 ± 0.001° |
| β | 74.371 ± 0.001° |
| γ | 83.488 ± 0.001° |
| Cell volume | 2702.47 ± 0.14 Å3 |
| Cell temperature | 153 ± 2 K |
| Ambient diffraction temperature | 153 ± 2 K |
| Number of distinct elements | 6 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.0429 |
| Residual factor for significantly intense reflections | 0.0308 |
| Weighted residual factors for significantly intense reflections | 0.0739 |
| Weighted residual factors for all reflections included in the refinement | 0.0833 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.067 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
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The link is: https://www.crystallography.net/4106782.html
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Users of the data should acknowledge the original authors of the
structural data.