Information card for entry 4106891

Structure parameters

• Formula: C32 H48 O4 Si2 W
• Calculated formula: C32 H48 O4 Si2 W
• SMILES: [W]1234(O[Si](O[Si](C)(C)C)(c5c(C)cc(cc5C)C)c5c(C)cc(cc5C)C)(=O)(=O)[c]5([c]1([c]3([c]4([c]25C)C)CC)C)C
• Title of publication: Synthesis of a Base-Stabilized Silanone-Coordinated Complex by Oxygenation of a (Silyl)(silylene)tungsten Complex
• Authors of publication: Takako Muraoka; Keisuke Abe; Youhei Haga; Tomoko Nakamura; Keiji Ueno
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2011
• Journal volume: 133
• Pages of publication: 15365 - 15367
• a: 11.414 ± 0.002 Å
• b: 12.2453 ± 0.0019 Å
• c: 12.606 ± 0.002 Å
• α: 78.318 ± 0.017°
• β: 83.57 ± 0.018°
• γ: 80.96 ± 0.018°
• Cell volume: 1698.1 ± 0.5 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0441
• Residual factor for significantly intense reflections: 0.0437
• Weighted residual factors for significantly intense reflections: 0.1077
• Weighted residual factors for all reflections included in the refinement: 0.108
• Goodness-of-fit parameter for all reflections included in the refinement: 1.191
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No