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Information card for entry 4107154
Preview
| Coordinates | 4107154.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C72 H72 Ge2 N2 Si2 |
|---|---|
| Calculated formula | C72 H72 Ge2 N2 Si2 |
| SMILES | [Ge](N(c1c(C(c2ccccc2)c2ccccc2)cc(cc1C(c1ccccc1)c1ccccc1)C)[Si](C)(C)C)[Ge]N(c1c(C(c2ccccc2)c2ccccc2)cc(cc1C(c1ccccc1)c1ccccc1)C)[Si](C)(C)C |
| Title of publication | A Digermyne with a Ge-Ge Single Bond That Activates Dihydrogen in the Solid State |
| Authors of publication | Jiaye Li; Christian Schenk; Catharina Goedecke; Gernot Frenking; Cameron Jones |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2011 |
| Journal volume | 133 |
| Pages of publication | 18622 - 18625 |
| a | 28.449 ± 0.006 Å |
| b | 9.742 ± 0.0019 Å |
| c | 24.138 ± 0.005 Å |
| α | 90° |
| β | 117.76 ± 0.03° |
| γ | 90° |
| Cell volume | 5920 ± 3 Å3 |
| Cell temperature | 100 ± 2 K |
| Ambient diffraction temperature | 100 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.0464 |
| Residual factor for significantly intense reflections | 0.0444 |
| Weighted residual factors for significantly intense reflections | 0.1056 |
| Weighted residual factors for all reflections included in the refinement | 0.1069 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.031 |
| Diffraction radiation wavelength | 0.71069 Å |
| Diffraction radiation type | Synchrotron |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4107154.html
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