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Information card for entry 4110757
Preview
| Coordinates | 4110757.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C117 H46 N Sc3 Si2 |
|---|---|
| Calculated formula | C117 H46 N Sc3 Si2 |
| Title of publication | Characterization of the Bis-Silylated Endofullerene Sc3N@C80 |
| Authors of publication | Takatsugu Wakahara; Yuko Iiduka; Ozora Ikenaga; Tsukasa Nakahodo; Akihiro Sakuraba; Takahiro Tsuchiya; Yutaka Maeda; Masahiro Kako; Takeshi Akasaka; Kenji Yoza; Ernst Horn; Naomi Mizorogi; Shigeru Nagase |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2006 |
| Journal volume | 128 |
| Pages of publication | 9919 - 9925 |
| a | 20.4678 ± 0.0014 Å |
| b | 20.4678 ± 0.0014 Å |
| c | 15.804 ± 0.002 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 6620.8 ± 1.1 Å3 |
| Cell temperature | 90 K |
| Ambient diffraction temperature | 90 K |
| Number of distinct elements | 5 |
| Space group number | 80 |
| Hermann-Mauguin space group symbol | I 41 |
| Hall space group symbol | I 4bw |
| Residual factor for all reflections | 0.1501 |
| Residual factor for significantly intense reflections | 0.1474 |
| Weighted residual factors for significantly intense reflections | 0.3787 |
| Weighted residual factors for all reflections included in the refinement | 0.3804 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.11 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
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