Crystallography Open Database

Information card for entry 4110781

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Structure parameters

Formula	C18 H4 F4 N4 S4
Calculated formula	C18 H4 F4 N4 S4
Title of publication	High Performance n- and p-Type Field-Effect Transistors Based on Tetrathiafulvalene Derivatives
Authors of publication	Naraso; Jun-ichi Nishida; Daisuke Kumaki; Shizuo Tokito; Yoshiro Yamashita
Journal of publication	Journal of the American Chemical Society
Year of publication	2006
Journal volume	128
Pages of publication	9598 - 9599
a	3.855 ± 0.006 Å
b	6.64 ± 0.01 Å
c	16.61 ± 0.02 Å
α	81.55 ± 0.05°
β	86.1 ± 0.05°
γ	79.42 ± 0.06°
Cell volume	413 ± 1 Å³
Cell temperature	93.2 K
Number of distinct elements	5
Space group number	2
Hermann-Mauguin space group symbol	P -1
Hall space group symbol	-P 1
Residual factor for significantly intense reflections	0.055
Weighted residual factors for all reflections included in the refinement	0.2132
Goodness-of-fit parameter for all reflections included in the refinement	1.791
Diffraction radiation wavelength	0.7107 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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