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Information card for entry 4111810
Preview
| Coordinates | 4111810.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C54 H62 O Si4 Zr |
|---|---|
| Calculated formula | C54 H62 O Si4 Zr |
| SMILES | [Zr]123456789([O]%10CCCC%10)([CH]%10=[CH]1[CH]2=[CH]3C14[C]5%10=C([Si](C)(C)c2ccccc2)C=C1[Si](C)(C)c1ccccc1)[c]1([Si](C)(C)c2ccccc2)[cH]6[c]7([Si](C)(C)c2ccccc2)[c]28[c]91cccc2 |
| Title of publication | Ligand-Induced Haptotropic Rearrangements in Bis(indenyl)zirconium Sandwich Complexes |
| Authors of publication | Christopher A. Bradley; Emil Lobkovsky; Ivan Keresztes; Paul J. Chirik |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2005 |
| Journal volume | 127 |
| Pages of publication | 10291 - 10304 |
| a | 12.7495 ± 0.001 Å |
| b | 12.9326 ± 0.001 Å |
| c | 17.4158 ± 0.0013 Å |
| α | 87.677 ± 0.002° |
| β | 70.785 ± 0.002° |
| γ | 64.14 ± 0.002° |
| Cell volume | 2422.1 ± 0.3 Å3 |
| Cell temperature | 173 ± 2 K |
| Ambient diffraction temperature | 173 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.0609 |
| Residual factor for significantly intense reflections | 0.0402 |
| Weighted residual factors for significantly intense reflections | 0.0919 |
| Weighted residual factors for all reflections included in the refinement | 0.1002 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.034 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4111810.html
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Users of the data should acknowledge the original authors of the
structural data.