Information card for entry 4116168

Structure parameters

• Formula: C28 H52 In N4 O3.5
• Calculated formula: C28 H52 In N4 O3.5
• Title of publication: General Synthesis of Homoleptic Indium Alkoxide Complexes and the Chemical Vapor Deposition of Indium Oxide Films
• Authors of publication: Seigi Suh; David M. Hoffman
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2000
• Journal volume: 122
• Pages of publication: 9396 - 9404
• a: 9.8335 ± 0.0006 Å
• b: 11.4492 ± 0.0007 Å
• c: 15.4315 ± 0.0009 Å
• α: 111.581 ± 0.001°
• β: 90.335 ± 0.001°
• γ: 93.682 ± 0.001°
• Cell volume: 1611.43 ± 0.17 ų
• Cell temperature: 223 ± 2 K
• Ambient diffraction temperature: 223 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0364
• Residual factor for significantly intense reflections: 0.0344
• Weighted residual factors for significantly intense reflections: 0.0895
• Weighted residual factors for all reflections included in the refinement: 0.0918
• Goodness-of-fit parameter for all reflections included in the refinement: 1.046
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No