Information card for entry 4117689

Structure parameters

• Formula: C43.5 H55 Cl4 Ge2 N3
• Calculated formula: C43.5 H55 Cl4 Ge2 N3
• SMILES: [Ge]12(Cl)[n]3c(cccc3C(=[N]1c1c(cccc1C(C)C)C(C)C)C)C(=[N]2c1c(cccc1C(C)C)C(C)C)C.[Ge](Cl)(Cl)[Cl-].c1(ccccc1)C.Cc1ccccc1
• Title of publication: Lewis Base Mediated Autoionization of GeCl2 and SnCl2
• Authors of publication: Amit Pratap Singh; Herbert W. Roesky; Elena Carl; Dietmar Stalke; Jean-Philippe Demers; Adam Lange
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2012
• Journal volume: 134
• Pages of publication: 4998 - 5003
• a: 10.33 ± 0.003 Å
• b: 13.013 ± 0.003 Å
• c: 16.873 ± 0.007 Å
• α: 93.66 ± 0.02°
• β: 97.33 ± 0.02°
• γ: 103.26 ± 0.02°
• Cell volume: 2179.4 ± 1.2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0332
• Residual factor for significantly intense reflections: 0.0253
• Weighted residual factors for significantly intense reflections: 0.055
• Weighted residual factors for all reflections included in the refinement: 0.0569
• Goodness-of-fit parameter for all reflections included in the refinement: 1.045
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No