Information card for entry 4117958

Structure parameters

• Formula: Cs I3 Sn
• Calculated formula: Cs I3 Sn
• Title of publication: CsSnI3: Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions
• Authors of publication: In Chung; Jung-Hwan Song; Jino Im; John Androulakis; Christos D. Malliakas; Hao Li; Arthur J. Freeman; John T. Kenney; Mercouri G. Kanatzidis
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2012
• Journal volume: 134
• Pages of publication: 8579 - 8587
• a: 8.7182 ± 0.0008 Å
• b: 8.7182 ± 0.0008 Å
• c: 6.1908 ± 0.0006 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 470.54 ± 0.08 ų
• Cell temperature: 380 ± 2 K
• Ambient diffraction temperature: 380 ± 2 K
• Number of distinct elements: 3
• Space group number: 127
• Hermann-Mauguin space group symbol: P 4/m b m
• Hall space group symbol: -P 4 2ab
• Residual factor for all reflections: 0.0822
• Residual factor for significantly intense reflections: 0.0656
• Weighted residual factors for significantly intense reflections: 0.152
• Weighted residual factors for all reflections included in the refinement: 0.1599
• Goodness-of-fit parameter for all reflections included in the refinement: 1.128
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No