Information card for entry 4122848

Structure parameters

• Formula: C48 H24
• Calculated formula: C48 H24
• SMILES: c1cc2c3c4c5c6c7c(c8ccccc8c6c6c(c5c5c3cccc5)cccc6)c3ccccc3c3c7c4c(c2cc1)c1c3cccc1
• Title of publication: Tuning Polymorphism and Orientation in Organic Semiconductor Thin Films via Post-deposition Processing.
• Authors of publication: Hiszpanski, Anna M.; Baur, Robin M.; Kim, Bumjung; Tremblay, Noah J.; Nuckolls, Colin; Woll, Arthur R.; Loo, Yueh-Lin
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2014
• Journal volume: 136
• Journal issue: 44
• Pages of publication: 15749 - 15756
• a: 18.731 ± 0.002 Å
• b: 8.154 ± 0.001 Å
• c: 19.066 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 2912 ± 0.6 ų
• Cell temperature: 125 ± 2 K
• Ambient diffraction temperature: 125 ± 2 K
• Number of distinct elements: 2
• Space group number: 60
• Hermann-Mauguin space group symbol: P b c n
• Hall space group symbol: -P 2n 2ab
• Residual factor for all reflections: 0.1525
• Residual factor for significantly intense reflections: 0.0618
• Weighted residual factors for significantly intense reflections: 0.1068
• Weighted residual factors for all reflections included in the refinement: 0.1359
• Goodness-of-fit parameter for all reflections included in the refinement: 1
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No