Information card for entry 4126031
| Formula |
Bi2.46 Cd1.54 Rb1.53 S6 |
| Calculated formula |
Bi2.4748 Cd1.5268 Rb1.522 S6 |
| Title of publication |
The Two-Dimensional AxCdxBi4-xQ6 (A = K, Rb, Cs; Q = S, Se): Direct Bandgap Semiconductors and Ion-Exchange Materials. |
| Authors of publication |
Zhao, Jing; Islam, Saiful M.; Kontsevoi, Oleg Y.; Tan, Gangjian; Stoumpos, Constantinos C.; Chen, Haijie; Li, Rukang; Kanatzidis, Mercouri G. |
| Journal of publication |
Journal of the American Chemical Society |
| Year of publication |
2017 |
| a |
3.9968 ± 0.0008 Å |
| b |
6.9243 ± 0.0014 Å |
| c |
23.7 ± 0.005 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
655.9 ± 0.2 Å3 |
| Cell temperature |
293 ± 2 K |
| Ambient diffraction temperature |
293 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
63 |
| Hermann-Mauguin space group symbol |
C m c m |
| Hall space group symbol |
-C 2c 2 |
| Residual factor for all reflections |
0.0597 |
| Residual factor for significantly intense reflections |
0.0556 |
| Weighted residual factors for significantly intense reflections |
0.1155 |
| Weighted residual factors for all reflections included in the refinement |
0.1175 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.23 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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