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Information card for entry 4126559
Preview
| Coordinates | 4126559.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Chemical name | C36H42N2O2S2 |
|---|---|
| Formula | C36 H42.5 N2 O2 S2 |
| Calculated formula | C36 H42 N2 O2 S2 |
| Title of publication | Naphthalene Bis(4,8-diamino-1,5-dicarboxyl)amide Building Block for Semiconducting Polymers. |
| Authors of publication | Eckstein, Brian J.; Melkonyan, Ferdinand S.; Manley, Eric F.; Fabiano, Simone; Mouat, Aidan R.; Chen, Lin X.; Facchetti, Antonio; Marks, Tobin J. |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2017 |
| a | 10.658 ± 0.002 Å |
| b | 17.786 ± 0.004 Å |
| c | 17.91 ± 0.004 Å |
| α | 85.5 ± 0.03° |
| β | 86.97 ± 0.03° |
| γ | 74.4 ± 0.03° |
| Cell volume | 3258.1 ± 1.3 Å3 |
| Cell temperature | 100 K |
| Ambient diffraction temperature | 100 K |
| Number of distinct elements | 5 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.1296 |
| Residual factor for significantly intense reflections | 0.0815 |
| Weighted residual factors for significantly intense reflections | 0.2253 |
| Weighted residual factors for all reflections included in the refinement | 0.264 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.044 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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