Information card for entry 4130664
| Formula |
C42 H58 S6 Si6 |
| Calculated formula |
C42 H58 S6 Si6 |
| SMILES |
[Si](C)(C)(C)c1c2c3c(c4c(c5c(c6c3c(c3c(c7c2c([Si](C)(C)C)sc7)csc3[Si](C)(C)C)c([Si](C)(C)C)s6)sc([Si](C)(C)C)c5)cc([Si](C)(C)C)s4)s1 |
| Title of publication |
Thiophene-Based Double Helices: Syntheses, X-ray Structures, and Chiroptical Properties. |
| Authors of publication |
Zhang, Sheng; Liu, Xinming; Li, Chunli; Li, Lu; Song, Jinsheng; Shi, Jianwu; Morton, Martha; Rajca, Suchada; Rajca, Andrzej; Wang, Hua |
| Journal of publication |
Journal of the American Chemical Society |
| Year of publication |
2016 |
| Journal volume |
138 |
| Journal issue |
31 |
| Pages of publication |
10002 - 10010 |
| a |
12.2794 ± 0.0007 Å |
| b |
19.0648 ± 0.0011 Å |
| c |
23.574 ± 0.0013 Å |
| α |
90° |
| β |
100.784 ± 0.001° |
| γ |
90° |
| Cell volume |
5421.3 ± 0.5 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.0893 |
| Residual factor for significantly intense reflections |
0.0477 |
| Weighted residual factors for significantly intense reflections |
0.1218 |
| Weighted residual factors for all reflections included in the refinement |
0.1368 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.019 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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