Information card for entry 4134109

Structure parameters

• Formula: C10 H36 Br10 N4 Sn3
• Calculated formula: C10 H36 Br10 N4 Sn3
• Title of publication: A Potential Sn-Based Hybrid Perovskite Ferroelectric Semiconductor.
• Authors of publication: Li, Lina; Liu, Xitao; He, Chao; Wang, Sasa; Ji, Chengmin; Zhang, Xinyuan; Sun, Zhihua; Zhao, Sangen; Hong, Maochun; Luo, Junhua
• Journal of publication: Journal of the American Chemical Society
• Year of publication: 2020
• Journal volume: 142
• Journal issue: 3
• Pages of publication: 1159 - 1163
• a: 8.3285 ± 0.0003 Å
• b: 51.1418 ± 0.0017 Å
• c: 8.3709 ± 0.0003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 3565.5 ± 0.2 ų
• Cell temperature: 330 ± 2 K
• Ambient diffraction temperature: 330 ± 2 K
• Number of distinct elements: 5
• Space group number: 64
• Hermann-Mauguin space group symbol: C m c e
• Hall space group symbol: -C 2ac 2
• Residual factor for all reflections: 0.089
• Residual factor for significantly intense reflections: 0.0628
• Weighted residual factors for significantly intense reflections: 0.175
• Weighted residual factors for all reflections included in the refinement: 0.2008
• Goodness-of-fit parameter for all reflections included in the refinement: 1.007
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No