Information card for entry 4300910

Structure parameters

• Formula: C16 H38 As Ga I N2 Si2
• Calculated formula: C16 H38 As Ga I N2 Si2
• SMILES: [I][Ga]1([As]([Si](C)(C)C)[Si](C)(C)C)[N](=CC=[N]1C(C)(C)C)C(C)(C)C
• Title of publication: Reactions of a Gallium(II)-Diazabutadiene Dimer, [{{[(H)C(But)N]2}GaI}2], with [ME(SiMe3)2] (M = Li or Na; E = N, P, or As): Structural, EPR, and ENDOR Characterization of Paramagnetic Gallium(III) Pnictide Complexes
• Authors of publication: Karen L. Antcliff; Robert J. Baker; Cameron Jones; Damien M. Murphy; Richard P. Rose
• Journal of publication: Inorganic Chemistry
• Year of publication: 2005
• Journal volume: 44
• Pages of publication: 2098 - 2105
• a: 15.009 ± 0.003 Å
• b: 18.462 ± 0.004 Å
• c: 9.335 ± 0.0019 Å
• α: 90°
• β: 92.77 ± 0.03°
• γ: 90°
• Cell volume: 2583.7 ± 0.9 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1136
• Residual factor for significantly intense reflections: 0.0766
• Weighted residual factors for significantly intense reflections: 0.186
• Weighted residual factors for all reflections included in the refinement: 0.2097
• Goodness-of-fit parameter for all reflections included in the refinement: 1.02
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No