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Information card for entry 4301068
Preview
| Coordinates | 4301068.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Chemical name | (K-18C6)2Si9*py |
|---|---|
| Formula | C29 H53 K2 N O12 Si9 |
| Calculated formula | C29 H53 K2 N O12 Si9 |
| SMILES | c1ccccn1.[K]12345[O]6CC[O]1CC[O]2CC[O]3CC[O]4CC[O]5CC6.[K]12345[O]6CC[O]1CC[O]2CC[O]3CC[O]4CC[O]5CC6.[Si]123[Si]45[Si]67[Si]84[Si]41[Si]18[Si]34[Si]71[Si]256 |
| Title of publication | Ligand-Free Deltahedral Clusters of Silicon in Solution: Synthesis, Structure, and Electrochemistry of Si~9~^2-^ |
| Authors of publication | Goicoechea, Jose M.; Sevov, Slavi C. |
| Journal of publication | Inorganic Chemistry |
| Year of publication | 2005 |
| Journal volume | 44 |
| Journal issue | 8 |
| Pages of publication | 2654 - 2658 |
| a | 18.3204 ± 0.0016 Å |
| b | 14.0127 ± 0.0012 Å |
| c | 18.1038 ± 0.0016 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 4647.6 ± 0.7 Å3 |
| Cell temperature | 100 ± 2 K |
| Ambient diffraction temperature | 100 ± 2 K |
| Number of distinct elements | 6 |
| Space group number | 62 |
| Hermann-Mauguin space group symbol | P n m a |
| Hall space group symbol | -P 2ac 2n |
| Residual factor for all reflections | 0.1127 |
| Residual factor for significantly intense reflections | 0.0618 |
| Weighted residual factors for significantly intense reflections | 0.1493 |
| Weighted residual factors for all reflections included in the refinement | 0.1623 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.96 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/4301068.html
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Users of the data should acknowledge the original authors of the
structural data.