Crystallography Open Database

Information card for entry 4302570

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Structure parameters

Formula	C136 H170 O27 Si6 Te6
Calculated formula	C136 H170 O27 Si6 Te6
SMILES	c1(ccc(cc1)OC)[Te]1(c2ccc(cc2)OC)O[Si]2(O[Te](O[Si]3(O[Te](O[Si](O1)(O[Si]1(O[Te](O[Si](O[Te](O[Si](O3)(O[Te](c3ccc(cc3)OC)(c3ccc(cc3)OC)O1)C(C)(C)C)(c1ccc(cc1)OC)c1ccc(cc1)OC)(O2)C(C)(C)C)(c1ccc(cc1)OC)c1ccc(cc1)OC)C(C)(C)C)C(C)(C)C)(c1ccc(cc1)OC)c1ccc(cc1)OC)C(C)(C)C)(c1ccc(cc1)OC)c1ccc(cc1)OC)C(C)(C)C.Cc1ccccc1.Cc1ccccc1.Cc1ccccc1.Cc1ccccc1
Title of publication	Tellurasiloxane Cages Containing Te6Si4O12 and Te6Si6O15 Frameworks
Authors of publication	Vadapalli Chandrasekhar; Ramalingam Thirumoorthi
Journal of publication	Inorganic Chemistry
Year of publication	2009
Journal volume	48
Pages of publication	6236 - 6241
a	26.871 ± 0.002 Å
b	18.933 ± 0.002 Å
c	28.711 ± 0.003 Å
α	90°
β	107.086 ± 0.002°
γ	90°
Cell volume	13962 ± 2 Å³
Cell temperature	100 ± 2 K
Ambient diffraction temperature	100 ± 2 K
Number of distinct elements	5
Space group number	15
Hermann-Mauguin space group symbol	C 1 2/c 1
Hall space group symbol	-C 2yc
Residual factor for all reflections	0.0548
Residual factor for significantly intense reflections	0.0393
Weighted residual factors for significantly intense reflections	0.0934
Weighted residual factors for all reflections included in the refinement	0.1225
Goodness-of-fit parameter for all reflections included in the refinement	1.132
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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