Information card for entry 4306681

Structure parameters

• Formula: C16 H47 Cl9 Ga2 N2 P2 Si7
• Calculated formula: C16 H47 Cl9 Ga2 N2 P2 Si7
• SMILES: P12[P](N([Si](C)(C)C)[Si]([Si](C)(C)C)([Si](C)(C)C)Cl)([Si](N1[Si](C)(C)C)([Si](C)(C)C)Cl)[Ga](Cl)(Cl)[Cl][Ga]2(Cl)Cl.C(Cl)Cl
• Title of publication: GaCl3-Assisted Cyclization Reactions in Hypersilyl(trimethylsilyl)aminodichlorophosphine
• Authors of publication: Alexander Villinger; Andrea Westenkirchner; Ronald Wustrack; Axel Schulz
• Journal of publication: Inorganic Chemistry
• Year of publication: 2008
• Journal volume: 47
• Pages of publication: 9140 - 9142
• a: 23.591 ± 0.005 Å
• b: 11.032 ± 0.002 Å
• c: 16.922 ± 0.003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 4404.1 ± 1.5 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 7
• Space group number: 33
• Hermann-Mauguin space group symbol: P n a 21
• Hall space group symbol: P 2c -2n
• Residual factor for all reflections: 0.0652
• Residual factor for significantly intense reflections: 0.0412
• Weighted residual factors for significantly intense reflections: 0.0653
• Weighted residual factors for all reflections included in the refinement: 0.0727
• Goodness-of-fit parameter for all reflections included in the refinement: 0.937
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No