Information card for entry 4308375

Structure parameters

• Formula: C46 H78 N S3 Si6 V
• Calculated formula: C46 H78 N S3 Si6 V
• SMILES: [V](Sc1c([Si](C)(C)C)cccc1[Si](C)(C)C)(Sc1c([Si](C)(C)C)cccc1[Si](C)(C)C)(Sc1c([Si](C)(C)C)cccc1[Si](C)(C)C)=NC12CC3CC(C1)CC(C2)C3
• Title of publication: Synthesis of a Vanadium(III) Tris(arylthiolato) Complex and Its Reactions with Azide and Azo Compounds: Formation of a Sulfenamide Complex via Cleavage of an Azo NN Bond
• Authors of publication: Komuro, Takashi; Matsuo, Tsukasa; Kawaguchi, Hiroyuki; Tatsumi, Kazuyuki
• Journal of publication: Inorganic Chemistry
• Year of publication: 2005
• Journal volume: 44
• Journal issue: 2
• Pages of publication: 175 - 177
• a: 12.295 ± 0.003 Å
• b: 16.438 ± 0.004 Å
• c: 27.386 ± 0.007 Å
• α: 90°
• β: 99.814 ± 0.003°
• γ: 90°
• Cell volume: 5454 ± 2 ų
• Cell temperature: 173.1 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for significantly intense reflections: 0.055
• Weighted residual factors for all reflections included in the refinement: 0.154
• Goodness-of-fit parameter for all reflections included in the refinement: 1.001
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No