Information card for entry 4312624

Structure parameters

• Formula: C40 H42 Ag In P2 S4
• Calculated formula: C40 H42 Ag In P2 S4
• Title of publication: A New Facile Route for the Preparation of Single-Source Precursors for Bulk, Thin-Film, and Nanocrystallite I-III-VI Semiconductors
• Authors of publication: Kulbinder K. Banger; Michael H.-C. Jin; Jerry D. Harris; Philip E. Fanwick; Aloysius F. Hepp
• Journal of publication: Inorganic Chemistry
• Year of publication: 2003
• Journal volume: 42
• Pages of publication: 7713 - 7715
• a: 15.6671 ± 0.0004 Å
• b: 12.6092 ± 0.0004 Å
• c: 21.6432 ± 0.0008 Å
• α: 90°
• β: 108.412 ± 0.002°
• γ: 90°
• Cell volume: 4056.7 ± 0.2 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 6
• Space group number: 13
• Hermann-Mauguin space group symbol: P 1 2/c 1
• Hall space group symbol: -P 2yc
• Residual factor for all reflections: 0.0934
• Residual factor for significantly intense reflections: 0.0389
• Weighted residual factors for significantly intense reflections: 0.0759
• Weighted residual factors for all reflections included in the refinement: 0.0887
• Goodness-of-fit parameter for all reflections included in the refinement: 0.857
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No