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Information card for entry 4314893
Preview
| Coordinates | 4314893.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C58 H42 N4 O4 Sn |
|---|---|
| Calculated formula | C58 H42 N4 O4 Sn |
| SMILES | c12=C(c3ccccc3)c3ccc4C(=c5ccc6[n]5[Sn]5([n]2c(cc1)C(=c1ccc(=C6c2ccccc2)n51)c1ccccc1)(Oc1cc(OC)ccc1)(n34)Oc1cc(OC)ccc1)c1ccccc1 |
| Title of publication | Design and Synthesis of Sn-Porphyrin Based Molecular Gates |
| Authors of publication | Aurélie Guenet; Ernest Graf; Nathalie Kyritsakas; Mir Wais Hosseini |
| Journal of publication | Inorganic Chemistry |
| Year of publication | 2010 |
| Journal volume | 49 |
| Pages of publication | 1872 - 1883 |
| a | 8.1064 ± 0.0015 Å |
| b | 24.374 ± 0.007 Å |
| c | 11.057 ± 0.003 Å |
| α | 90° |
| β | 94.58 ± 0.007° |
| γ | 90° |
| Cell volume | 2177.7 ± 1 Å3 |
| Cell temperature | 173 ± 2 K |
| Ambient diffraction temperature | 173 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/c 1 |
| Hall space group symbol | -P 2ybc |
| Residual factor for all reflections | 0.0898 |
| Residual factor for significantly intense reflections | 0.0456 |
| Weighted residual factors for significantly intense reflections | 0.0863 |
| Weighted residual factors for all reflections included in the refinement | 0.0965 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.053 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4314893.html
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