Information card for entry 4317342

Structure parameters

• Formula: C66 H56 Cl4 F4 Ir O2 P4 Rh Si2
• Calculated formula: C66 H56 Cl4 F4 Ir O2 P4 Rh Si2
• Title of publication: Multiple Silicon-Hydrogen Bond Activations at Adjacent Rhodium and Iridium Centers
• Authors of publication: Md Hosnay Mobarok; Okemona Oke; Michael J. Ferguson; Robert McDonald; Martin Cowie
• Journal of publication: Inorganic Chemistry
• Year of publication: 2010
• Journal volume: 49
• Pages of publication: 11556 - 11572
• a: 12.5479 ± 0.0013 Å
• b: 22.295 ± 0.002 Å
• c: 22.699 ± 0.002 Å
• α: 90°
• β: 95.854 ± 0.001°
• γ: 90°
• Cell volume: 6317.1 ± 1 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 9
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0447
• Residual factor for significantly intense reflections: 0.0338
• Weighted residual factors for significantly intense reflections: 0.0927
• Weighted residual factors for all reflections included in the refinement: 0.1011
• Goodness-of-fit parameter for all reflections included in the refinement: 1.058
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No