Information card for entry 4318308

Structure parameters

• Formula: C15 H33 N O3 P3 Si V
• Calculated formula: C15 H33 N O3 P3 Si V
• SMILES: [V]12([P](C)(C)C[Si](C[P]1(C)C)(C[P]2(C)C)C(C)(C)C)(N=O)(C#[O])C#[O]
• Title of publication: Synthesis, Characterization, and Solution Redox Properties of (trimpsi)M(CO)2(NO) Complexes [M = V, Nb, Ta; trimpsi = tBuSi(CH2PMe2)3]
• Authors of publication: Trevor W. Hayton; P. James Daff; Peter Legzdins; Steven J. Rettig; Brian O. Patrick
• Journal of publication: Inorganic Chemistry
• Year of publication: 2002
• Journal volume: 41
• Pages of publication: 4114 - 4126
• a: 16.453 ± 0.002 Å
• b: 10.246 ± 0.001 Å
• c: 13.488 ± 0.001 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 2273.8 ± 0.4 ų
• Cell temperature: 173.2 K
• Ambient diffraction temperature: 173.2 K
• Number of distinct elements: 7
• Space group number: 33
• Hermann-Mauguin space group symbol: P n a 21
• Hall space group symbol: P 2c -2n
• Residual factor for all reflections: 0.0936
• Residual factor for significantly intense reflections: 0.045
• Weighted residual factors for all reflections: 0.1445
• Weighted residual factors for all reflections included in the refinement: 0.1445
• Goodness-of-fit parameter for all reflections: 0.955
• Goodness-of-fit parameter for all reflections included in the refinement: 0.955
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No