Information card for entry 4319759

Structure parameters

• Formula: C72 H172 N3 O16 Sb4 Si6
• Calculated formula: C72 N4 O16 Sb4 Si6
• SMILES: C[Si](O[Sb]123(O[Sb]7([O]2[Sb]2([O]3[Sb](O1)(O2)(O[Si](C)(C)C(C)(C)C)([O-])[O-])(O7)(O[Si](C)(C)C(C)(C)C)O[Si](C)(C)C(C)(C)C)(O[Si](C)(C)C(C)(C)C)([O-])[O-])O[Si](C)(C)C(C)(C)C)(C)C(C)(C)C.[N+](CCCC)(CCCC)(CCCC)CCCC.N#CC.[N+](CCCC)(CCCC)(CCCC)CCCC.N#CC
• Title of publication: A New Polyantimonate with an Sb4O16 Core
• Authors of publication: Y. Kusaka; Y. Ozawa; A. Yagasaki
• Journal of publication: Inorganic Chemistry
• Year of publication: 2001
• Journal volume: 40
• Pages of publication: 2634 - 2635
• a: 14.329 ± 0.0007 Å
• b: 16.367 ± 0.0009 Å
• c: 22.307 ± 0.0013 Å
• α: 90°
• β: 95.985 ± 0.003°
• γ: 90°
• Cell volume: 5203 ± 0.5 ų
• Cell temperature: 120 K
• Ambient diffraction temperature: 120 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.117
• Residual factor for significantly intense reflections: 0.063
• Weighted residual factors for all reflections: 43.378
• Weighted residual factors for all reflections included in the refinement: 0.182
• Goodness-of-fit parameter for all reflections: 268.633
• Goodness-of-fit parameter for all reflections included in the refinement: 1.463
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No