Information card for entry 4326228

Structure parameters

• Formula: C39 H66 Ga N3 O4 Si
• Calculated formula: C39 H66 Ga N3 O4 Si
• SMILES: [Ga]1(O[Si](O)(OC(C)(C)C)OC(C)(C)C)(N(C(=CC(=[N]1c1c(cccc1C(C)C)C(C)C)C)C)c1c(cccc1C(C)C)C(C)C)NCC
• Title of publication: Molecular Gallosilicates and Their Group 4 Multimetallic Derivatives
• Authors of publication: Diego Solis-Ibarra; Miriam Velásquez-Hernández; Raúl Huerta-Lavorie; Vojtech Jancik
• Journal of publication: Inorganic Chemistry
• Year of publication: 2011
• Journal volume: 50
• Pages of publication: 8907 - 8917
• a: 11.937 ± 0.001 Å
• b: 12.312 ± 0.002 Å
• c: 16.403 ± 0.002 Å
• α: 100.16 ± 0.02°
• β: 92.8 ± 0.02°
• γ: 118.28 ± 0.02°
• Cell volume: 2065.2 ± 0.7 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.036
• Residual factor for significantly intense reflections: 0.0328
• Weighted residual factors for significantly intense reflections: 0.0805
• Weighted residual factors for all reflections included in the refinement: 0.082
• Goodness-of-fit parameter for all reflections included in the refinement: 1.061
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No