Information card for entry 4327682

Structure parameters

• Formula: C32 H72 F4 O4 Si4 Sn2
• Calculated formula: C32 H72 F4 O4 Si4 Sn2
• SMILES: C(C)(C)(C)[Sn]1(O[Si@](F)(C(C)(C)C)[Si@](F)(O[Sn](C(C)(C)C)(C(C)(C)C)O[Si@@](F)(C(C)(C)C)[Si@](O1)(F)C(C)(C)C)C(C)(C)C)C(C)(C)C
• Title of publication: Reactions of [t-Bu2SnO]3 with [t-BuX2Si]2 (X = F, Cl). Syntheses and Structures of Novel Stannasiloxanes and of [(t-Bu2FSn)2O]2, the First Fluorine-Containing Tetraorganodistannoxane
• Authors of publication: Jens Beckmann; Monique Biesemans; Karl Hassler; Klaus Jurkschat; Jose C. Martins; Markus Schürmann; Rudolph Willem
• Journal of publication: Inorganic Chemistry
• Year of publication: 1998
• Journal volume: 37
• Pages of publication: 4891 - 4897
• a: 9.706 ± 0.001 Å
• b: 11.732 ± 0.001 Å
• c: 11.818 ± 0.001 Å
• α: 114.01 ± 0.001°
• β: 92.04 ± 0.001°
• γ: 108.23 ± 0.001°
• Cell volume: 1146.82 ± 0.18 ų
• Cell temperature: 291 ± 1 K
• Ambient diffraction temperature: 291 ± 1 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0538
• Residual factor for significantly intense reflections: 0.0347
• Weighted residual factors for all reflections: 0.0774
• Weighted residual factors for significantly intense reflections: 0.0732
• Goodness-of-fit parameter for all reflections: 0.949
• Goodness-of-fit parameter for significantly intense reflections: 1.04
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No