Information card for entry 4332548

Structure parameters

• Formula: Dy4 Ge4 In Ni2
• Calculated formula: Dy4 Ge4 In Ni2
• Title of publication: Indium Flux Synthesis of RE4Ni2InGe4(RE = Dy, Ho, Er, and Tm): An Ordered Quaternary Variation on the Binary Phase Mg5Si6
• Authors of publication: Salvador, James R.; Kanatzidis, Mercouri G.
• Journal of publication: Inorganic Chemistry
• Year of publication: 2006
• Journal volume: 45
• Journal issue: 18
• Pages of publication: 7091 - 7099
• a: 15.42 ± 0.002 Å
• b: 4.2224 ± 0.0007 Å
• c: 7.0191 ± 0.0011 Å
• α: 90°
• β: 108.589 ± 0.002°
• γ: 90°
• Cell volume: 433.17 ± 0.11 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 4
• Space group number: 12
• Hermann-Mauguin space group symbol: C 1 2/m 1
• Hall space group symbol: -C 2y
• Residual factor for all reflections: 0.0233
• Residual factor for significantly intense reflections: 0.0222
• Weighted residual factors for significantly intense reflections: 0.0517
• Weighted residual factors for all reflections included in the refinement: 0.0521
• Goodness-of-fit parameter for all reflections included in the refinement: 1.188
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No