Information card for entry 4332793

Structure parameters

• Formula: C71 H121 Ga2 K N6 Si2 Sn
• Calculated formula: C71 H121 Ga2 K N6 Si2 Sn
• SMILES: [Sn]([Ga]1N(C=CN1[c]12[c]3([K]45671([N](C)(C)CC[N]5(C)C)[c]2([cH]6[cH]7[cH]34)C(C)C)C(C)C)c1c(cccc1C(C)C)C(C)C)([Ga]1N(C=CN1c1c(cccc1C(C)C)C(C)C)c1c(cccc1C(C)C)C(C)C)C([Si](C)(C)C)[Si](C)(C)C.CCCCCC
• Title of publication: Complexes of an Anionic Gallium(I)N-Heterocyclic Carbene Analogue with Group 14 Element(II) Fragments: Synthetic, Structural and Theoretical Studies
• Authors of publication: Green, Shaun P.; Jones, Cameron; Lippert, Kai-Alexander; Mills, David P.; Stasch, Andreas
• Journal of publication: Inorganic Chemistry
• Year of publication: 2006
• Journal volume: 45
• Journal issue: 18
• Pages of publication: 7242 - 7251
• a: 14.497 ± 0.0019 Å
• b: 16.782 ± 0.002 Å
• c: 17.605 ± 0.003 Å
• α: 77.94 ± 0.01°
• β: 76.27 ± 0.01°
• γ: 71.46 ± 0.01°
• Cell volume: 3903.1 ± 1 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 7
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0653
• Residual factor for significantly intense reflections: 0.0462
• Weighted residual factors for significantly intense reflections: 0.1053
• Weighted residual factors for all reflections included in the refinement: 0.1142
• Goodness-of-fit parameter for all reflections included in the refinement: 1.041
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No