Information card for entry 4332880

Structure parameters

• Formula: C12 H23 Cu N2 Si
• Calculated formula: C12 H23 Cu N2 Si
• SMILES: [Cu]12([N]3=C(C=C(N1)C)CCC3)[CH2]=[CH]2[Si](C)(C)C
• Title of publication: Nonfluorinated Volatile Copper(I) 1,3-Diketiminates as Precursors for Cu Metal Deposition via Atomic Layer Deposition
• Authors of publication: Park, Kyung-Ho; Bradley, Alexander Z.; Thompson, Jeffery S.; Marshall, Will J.
• Journal of publication: Inorganic Chemistry
• Year of publication: 2006
• Journal volume: 45
• Journal issue: 21
• Pages of publication: 8480 - 8482
• a: 22.053 ± 0.005 Å
• b: 5.8438 ± 0.0013 Å
• c: 11.765 ± 0.003 Å
• α: 90°
• β: 101.724 ± 0.004°
• γ: 90°
• Cell volume: 1484.6 ± 0.6 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0491
• Residual factor for significantly intense reflections: 0.0336
• Weighted residual factors for significantly intense reflections: 0.082
• Weighted residual factors for all reflections included in the refinement: 0.0905
• Goodness-of-fit parameter for all reflections included in the refinement: 1.029
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No