Information card for entry 4341926

Structure parameters

• Formula: C26 H70 I2 O2 Si8 Zn2
• Calculated formula: C26 H35 I2 O2 Si8 Zn2
• Title of publication: Reductive Elimination of Hypersilyl Halides from Zinc(II) Complexes. Implications for Electropositive Metal Thin Film Growth.
• Authors of publication: Sirimanne, Chatu T.; Kerrigan, Marissa M.; Martin, Philip D.; Kanjolia, Ravindra K.; Elliott, Simon D.; Winter, Charles H.
• Journal of publication: Inorganic chemistry
• Year of publication: 2015
• Journal volume: 54
• Journal issue: 1
• Pages of publication: 7 - 9
• a: 9.485 ± 0.004 Å
• b: 17.944 ± 0.006 Å
• c: 29.215 ± 0.012 Å
• α: 76.04 ± 0.02°
• β: 83.79 ± 0.02°
• γ: 82.887 ± 0.017°
• Cell volume: 4773 ± 3 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0879
• Residual factor for significantly intense reflections: 0.0619
• Weighted residual factors for significantly intense reflections: 0.1624
• Weighted residual factors for all reflections included in the refinement: 0.183
• Goodness-of-fit parameter for all reflections included in the refinement: 0.894
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No