Information card for entry 4342352

Structure parameters

• Formula: Cu Ga O2
• Calculated formula: Cu Ga O2
• Title of publication: Structural and Thermal Properties of Ternary Narrow-Gap Oxide Semiconductor; Wurtzite-Derived β-CuGaO2.
• Authors of publication: Nagatani, Hiraku; Suzuki, Issei; Kita, Masao; Tanaka, Masahiko; Katsuya, Yoshio; Sakata, Osami; Miyoshi, Shogo; Yamaguchi, Shu; Omata, Takahisa
• Journal of publication: Inorganic chemistry
• Year of publication: 2015
• Journal volume: 54
• Journal issue: 4
• Pages of publication: 1698 - 1704
• a: 5.46004 ± 0.00001 Å
• b: 6.61013 ± 0.00002 Å
• c: 5.27417 ± 0.00001 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 190.353 ± 0.0008 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 3
• Space group number: 33
• Hermann-Mauguin space group symbol: P n a 21
• Hall space group symbol: P 2c -2n
• Method of determination: powder diffraction
• Diffraction radiation wavelength: 0.65273 Å
• Diffraction radiation type: synchrotronradiation
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No