Information card for entry 4342550

Structure parameters

• Formula: C32 H73 Ga N8 P4 Te3
• Calculated formula: C32 H73 Ga N8 P4 Te3
• SMILES: [Te]1[Ga]2([Te]P3(N(C(C)(C)C)P1(=NC(C)(C)C)N3C(C)(C)C)=NC(C)(C)C)[Te][P]1(N(C(C)(C)C)P(NC(C)(C)C)N1C(C)(C)C)N2C(C)(C)C
• Title of publication: [In Process Citation].
• Authors of publication: Nordheider, Andreas; Hüll, Katharina; Prentis, Joanna K. D.; Athukorala Arachchige, Kasun S.; Slawin, Alexandra M. Z.; Woollins, J. Derek; Chivers, Tristram
• Journal of publication: Inorganic chemistry
• Year of publication: 2015
• Journal volume: 54
• Journal issue: 6
• Pages of publication: 3043 - 3054
• a: 10.4461 ± 0.0018 Å
• b: 13.727 ± 0.002 Å
• c: 16.79 ± 0.003 Å
• α: 90°
• β: 98.864 ± 0.005°
• γ: 90°
• Cell volume: 2378.8 ± 0.7 ų
• Cell temperature: 125 K
• Ambient diffraction temperature: 125 K
• Number of distinct elements: 6
• Space group number: 4
• Hermann-Mauguin space group symbol: P 1 21 1
• Hall space group symbol: P 2yb
• Residual factor for all reflections: 0.0837
• Residual factor for significantly intense reflections: 0.0731
• Weighted residual factors for significantly intense reflections: 0.1788
• Weighted residual factors for all reflections included in the refinement: 0.1887
• Goodness-of-fit parameter for all reflections included in the refinement: 1.135
• Diffraction radiation wavelength: 0.71075 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No