Information card for entry 4345232

Structure parameters

• Formula: C41 H51 Ge N2 P Se
• Calculated formula: C41 H51 Ge N2 P Se
• SMILES: [Se]([Ge]1[N](=C(C=C(N1c1c(cccc1C(C)C)C(C)C)C)C)c1c(cccc1C(C)C)C(C)C)P(c1ccccc1)c1ccccc1
• Title of publication: The Reactivity of Germanium Phosphanides with Chalcogens
• Authors of publication: Harris, Lisa M.; Tam, Eric C. Y.; Cummins, Struan J. W.; Coles, Martyn P.; Fulton, J. Robin
• Journal of publication: Inorganic Chemistry
• Year of publication: 2017
• a: 11.851 ± 0.0004 Å
• b: 12.6357 ± 0.0005 Å
• c: 14.2256 ± 0.0005 Å
• α: 98.703 ± 0.002°
• β: 94.437 ± 0.002°
• γ: 113.262 ± 0.002°
• Cell volume: 1912.34 ± 0.13 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0524
• Residual factor for significantly intense reflections: 0.0354
• Weighted residual factors for significantly intense reflections: 0.0812
• Weighted residual factors for all reflections included in the refinement: 0.0887
• Goodness-of-fit parameter for all reflections included in the refinement: 0.973
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.7107 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No