Information card for entry 4345234

Structure parameters

• Formula: C35 H59 Ge N2 P Se Si2
• Calculated formula: C35 H59 Ge N2 P Se Si2
• SMILES: [Se]=[Ge]1(P([Si](C)(C)C)[Si](C)(C)C)[N](=C(C=C(N1c1c(cccc1C(C)C)C(C)C)C)C)c1c(cccc1C(C)C)C(C)C
• Title of publication: The Reactivity of Germanium Phosphanides with Chalcogens
• Authors of publication: Harris, Lisa M.; Tam, Eric C. Y.; Cummins, Struan J. W.; Coles, Martyn P.; Fulton, J. Robin
• Journal of publication: Inorganic Chemistry
• Year of publication: 2017
• a: 13.5873 ± 0.0002 Å
• b: 18.7351 ± 0.0004 Å
• c: 17.6743 ± 0.0003 Å
• α: 90°
• β: 117.597 ± 0.001°
• γ: 90°
• Cell volume: 3987.28 ± 0.13 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0537
• Residual factor for significantly intense reflections: 0.0335
• Weighted residual factors for significantly intense reflections: 0.0676
• Weighted residual factors for all reflections included in the refinement: 0.0744
• Goodness-of-fit parameter for all reflections included in the refinement: 0.969
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No