Information card for entry 4347563
| Formula |
C36 H36 Ge2 Si3 |
| Calculated formula |
C36 H36 Ge2 Si3 |
| SMILES |
c1(ccccc1)[Ge](c1ccccc1)(c1ccccc1)[Si]([Ge](c1ccccc1)(c1ccccc1)c1ccccc1)([SiH3])[SiH3] |
| Title of publication |
Selective Synthesis and Derivatization of Germasilicon Hydrides. |
| Authors of publication |
Stueger, Harald; Christopoulos, Viktor; Temmel, Andrea; Haas, Michael; Fischer, Roland; Torvisco, Ana; Wunnicke, Odo; Traut, Stephan; Martens, Susanne |
| Journal of publication |
Inorganic chemistry |
| Year of publication |
2016 |
| Journal volume |
55 |
| Journal issue |
8 |
| Pages of publication |
4034 - 4038 |
| a |
20.0813 ± 0.0008 Å |
| b |
10.3595 ± 0.0004 Å |
| c |
18.0204 ± 0.0007 Å |
| α |
90° |
| β |
112.296 ± 0.001° |
| γ |
90° |
| Cell volume |
3468.5 ± 0.2 Å3 |
| Cell temperature |
100 ± 2 K |
| Ambient diffraction temperature |
100 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.0423 |
| Residual factor for significantly intense reflections |
0.0333 |
| Weighted residual factors for significantly intense reflections |
0.0804 |
| Weighted residual factors for all reflections included in the refinement |
0.0847 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.067 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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