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Information card for entry 4350443
Preview
| Coordinates | 4350443.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Common name | [{TcCl3(CH3CN)2}2O] |
|---|---|
| Chemical name | Mu2-oxobis(diacetonitriletrichlorotechnetium(IV) |
| Formula | C8 H12 Cl6 N4 O Tc2 |
| Calculated formula | C8 H12 Cl6 N4 O Tc2 |
| SMILES | [N]([Tc](Cl)(Cl)(O[Tc]([N]#CC)([N]#CC)(Cl)(Cl)Cl)([N]#CC)Cl)#CC |
| Title of publication | Technetium tetrachloride as a precursor for small technetium(IV) complexes. |
| Authors of publication | Hagenbach, Adelheid; Yegen, Eda; Abram, Ulrich |
| Journal of publication | Inorganic chemistry |
| Year of publication | 2006 |
| Journal volume | 45 |
| Journal issue | 18 |
| Pages of publication | 7331 - 7338 |
| a | 10.0719 ± 0.0003 Å |
| b | 10.0719 ± 0.0003 Å |
| c | 44.724 ± 0.002 Å |
| α | 90° |
| β | 90° |
| γ | 120° |
| Cell volume | 3929.1 ± 0.2 Å3 |
| Cell temperature | 200 ± 2 K |
| Ambient diffraction temperature | 200 ± 2 K |
| Number of distinct elements | 6 |
| Space group number | 178 |
| Hermann-Mauguin space group symbol | P 61 2 2 |
| Hall space group symbol | P 61 2 (0 0 5) |
| Residual factor for all reflections | 0.0519 |
| Residual factor for significantly intense reflections | 0.0466 |
| Weighted residual factors for significantly intense reflections | 0.1174 |
| Weighted residual factors for all reflections included in the refinement | 0.1206 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.091 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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