Information card for entry 4350818

Structure parameters

• Formula: Cu22 S32 Sn10
• Calculated formula: Cu21.812 S32 Sn10.188
• Title of publication: Local-disorder-induced low thermal conductivity in degenerate semiconductor Cu22Sn10S32
• Authors of publication: Pavan Kumar, V.; Lemoine, P.; Carnevali, V.; Guelou, G.; Lebedev, O.I.; Raveau, B.; Al Rahal Al Orabi, R.; Fornari, M.; Candolfi, C.; Prestipino, C.; Menut, D.; Malaman, B.; Juraszek, J.; Suekuni, K.; Guilmeau, E.
• Journal of publication: Inorganic Chemistry
• Year of publication: 2021
• Journal volume: 60
• Journal issue: 21
• Pages of publication: 16273 - 16285
• a: 10.82345 ± 0.00003 Å
• b: 10.82345 ± 0.00003 Å
• c: 10.82345 ± 0.00003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1267.94 ± 0.006 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 3
• Space group number: 218
• Hermann-Mauguin space group symbol: P -4 3 n
• Hall space group symbol: P -4n 2 3
• Residual factor R(I) for significantly intense reflections: 81.8604
• Method of determination: powder diffraction
• Diffraction radiation wavelength: 0.72733 Å
• Diffraction radiation type: MARSbeamline,SOLEIL
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No