Information card for entry 4504689

Structure parameters

• Formula: C40 H32 Ag4 N8 O40 Si W12
• Calculated formula: C40 H32 Ag4 N8 O40 Si W12
• SMILES: [W]1234([O]56[W]78(O[W]95(O[W]5%10%11([O]%12%13[W]%14%15(=O)(O[W]%16%17%18([O]%19%20[W](O9)(O%17)(O[W]9%19(O7)(O%16)O[Ag]7[n]%16ccc(c%17[n]([Ag][n]%19ccc(c%21[n]([Ag](O[W]%22%23([O]%24([W](O[W]%24(O%22)(O%14)(=O)O%18)(=O)(O3)(O[W]%12(O4)(O%11)(O%15)=O)O%23)[Si]6%13%20)(O8)O9)[n]3ccc(c4[n]([Ag][n]6ccc(c8[n]7cccc8)cc6)cccc4)cc3)cccc%21)cc%19)cccc%17)cc%16)(O5)=O)=O)O%10)=O)(O2)=O)(O1)=O)=O
• Title of publication: Anion-Dependent Assembly of Cyclic Structure
• Authors of publication: Ren, Yan-Ping; Kong, Xiang-Jian; Long, La-Sheng; Huang, Rong-Bin; Zheng, Lan-Sun
• Journal of publication: Crystal Growth & Design
• Year of publication: 2006
• Journal volume: 6
• Journal issue: 2
• Pages of publication: 572
• a: 23.166 ± 0.004 Å
• b: 14.01 ± 0.003 Å
• c: 20.958 ± 0.004 Å
• α: 90°
• β: 107.466 ± 0.003°
• γ: 90°
• Cell volume: 6488 ± 2 ų
• Cell temperature: 123 ± 2 K
• Ambient diffraction temperature: 123 ± 2 K
• Number of distinct elements: 7
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1244
• Residual factor for significantly intense reflections: 0.1138
• Weighted residual factors for significantly intense reflections: 0.2414
• Weighted residual factors for all reflections included in the refinement: 0.2481
• Goodness-of-fit parameter for all reflections included in the refinement: 1.161
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No