Information card for entry 4512944

Structure parameters

• Formula: C42 H52 N2 Si2
• Calculated formula: C42 H52 N2 Si2
• Title of publication: Solution-Processed Ambipolar Organic Thin-Film Transistors by Blending p- and n-Type Semiconductors: Solid Solution versus Microphase Separation.
• Authors of publication: Xu, Xiaomin; Xiao, Ting; Gu, Xiao; Yang, Xuejin; Kershaw, Stephen V.; Zhao, Ni; Xu, Jianbin; Miao, Qian
• Journal of publication: ACS applied materials & interfaces
• Year of publication: 2015
• Journal volume: 7
• Journal issue: 51
• Pages of publication: 28019 - 28026
• a: 7.614 ± 0.004 Å
• b: 7.647 ± 0.004 Å
• c: 16.876 ± 0.008 Å
• α: 78.31 ± 0.009°
• β: 88.812 ± 0.009°
• γ: 82.064 ± 0.009°
• Cell volume: 953 ± 0.8 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1667
• Residual factor for significantly intense reflections: 0.0714
• Weighted residual factors for significantly intense reflections: 0.1739
• Weighted residual factors for all reflections included in the refinement: 0.2385
• Goodness-of-fit parameter for all reflections included in the refinement: 1.001
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No