Information card for entry 4517853

Structure parameters

• Formula: C H5 I3 N2 Sn
• Calculated formula: C H5 I3 N2 Sn
• Title of publication: Negative Thermal Quenching in FASnI3 Perovskite Single Crystals and Thin Films
• Authors of publication: Kahmann, Simon; Nazarenko, Olga; Shao, Shuyan; Hordiichuk, Oleh; Kepenekian, Mikaël; Even, Jacky; Kovalenko, Maksym V.; Blake, Graeme R.; Loi, Maria A.
• Journal of publication: ACS Energy Letters
• Year of publication: 2020
• Pages of publication: 2512 - 2519
• a: 8.8379 ± 0.0011 Å
• b: 8.8379 ± 0.0011 Å
• c: 12.4066 ± 0.0017 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 969.1 ± 0.2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 100
• Hermann-Mauguin space group symbol: P 4 b m
• Hall space group symbol: P 4 -2ab
• Residual factor for all reflections: 0.0449
• Residual factor for significantly intense reflections: 0.0429
• Weighted residual factors for significantly intense reflections: 0.1325
• Weighted residual factors for all reflections included in the refinement: 0.1344
• Goodness-of-fit parameter for all reflections included in the refinement: 1.075
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No